1SS372(2014) Hoja de datos - Toshiba
Fabricante
Toshiba
High Speed Switching Application
● Small package
● Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
Número de pieza
componentes Descripción
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Fabricante
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
( Rev : 2007 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type ( Rev : 2007 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
