1S2075(K) Hoja de datos - Hitachi -> Renesas Electronics
Fabricante
Hitachi -> Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
FEATUREs
• Low capacitance. (C = 3.5 pF max)
• Short reverse recovery time. (trr = 8.0 ns max)
• High reliability with glass seal.
Número de pieza
componentes Descripción
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Fabricante
Silicon Epitaxial Planar Diode for High Speed Switching
Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Hitachi -> Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Hitachi -> Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Hitachi -> Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Hitachi -> Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Renesas Electronics
Silicon Epitaxial Planar Diode for High Speed Switching
Hitachi -> Renesas Electronics
