datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Unisonic Technologies  >>> 1NNPP10G-S08-T PDF

1NNPP10G-S08-T Hoja de datos - Unisonic Technologies

1NNPP10 image

Número de pieza
1NNPP10G-S08-T

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
211.8 kB

Fabricante
UTC
Unisonic Technologies 

DESCRIPTION
   The UTC 1NNPP10 is a complementary enhancement mode MOSFET H-BRIDGE, it uses UTC advanced technology to provide customers low on resistance, low gate charge and low threshold voltage.
   The UTC 1NNPP10 is universally applied in DC-AC Inverters and DC Motor control.


FEATURES
* N-CHANNEL
   - RDS(on) =0.7Ω @VGS =10V, ID=1.5A
   - RDS(on) =0.9Ω @VGS = 6V, ID=1A,
* P-CHANNEL
   - RDS(on) =1.0Ω @VGS =-10V, ID=-0.6A
   - RDS(on) =1.45Ω @VGS = -6V , ID=-0.5A
* High switching speed
* Low gate charge (N-ch: Typ.=2.9nC, P-ch: Typ.=3.5nC)


Número de pieza
componentes Descripción
Ver
Fabricante
100V P-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2009 )
PDF
Diodes Incorporated.
100V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF
Diodes Incorporated.
100V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF
Diodes Incorporated.
100V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF
Diodes Incorporated.
100V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF
Diodes Incorporated.
-100V P-Channel Enhancement Mode MOSFET
PDF
Shanghai Leiditech Electronic Technology Co., Ltd
100V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF
Diodes Incorporated.
100V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF
Zetex => Diodes
100V P-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2009 )
PDF
Diodes Incorporated.
100V P-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2015 )
PDF
Diodes Incorporated.

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]