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1N5820(2006) Hoja de datos - ON Semiconductor

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Número de pieza
1N5820

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ON-Semiconductor
ON Semiconductor 

Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.


FEATUREs
• Extremely Low VF
• Low Power Loss/High Efficiency
• Low Stored Charge, Majority Carrier Conduction
• Shipped in plastic bags, 500 per bag
• Available in Tape and Reel, 1500 per reel, by adding a “RL’’ suffix to
   the part number
• Pb−Free Packages are Available*

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