150N10F7AG Hoja de datos - STMicroelectronics
Número de pieza
150N10F7AG
Fabricante

STMicroelectronics
Description
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
• Designed for automotive application
• Standard level VGS(TH)
• 175°C junction temperature
• 100% avalanche rated
APPLICATIONs
• Switching applications
Número de pieza
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Fabricante
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Automotive-grade N-channel 100 V, 5 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package
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