Número de pieza
138P200-W-AG
componentes Descripción
Other PDF
no available.
PDF
page
1 Pages
File Size
152.6 kB
Fabricante
Transys Electronics Limited
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138P200-W-AG Hoja de datos - Transys Electronics Limited
Transys Electronics Limited
Features
Oxide Passivated Junction
Low Forward Voltage
150 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Platinum Barrier
Número de pieza
componentes Descripción
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Fabricante
Schottky Barrier Diode Wafer 106x138 Mils, 150 Volt, 15 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 106x138 Mils, 125 Volt, 15 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 40 Mils, 200 Volt, 1 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 90 Mils, 200 Volt, 8 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 63 Mils, 200 Volt, 3 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 2 Amp, 0.32VF.
Transys Electronics Limited
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