Description
   The KIA12N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FEATUREs
◾ RDS(on)= 0.53Ω @ VGS= 10 V
◾ Low gate charge ( typical 52nC)
◾ Fast switching capability
◾ avalanche energy specified
◾ Improved dv/dt capability