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10N60L-TF1-T(2012) Hoja de datos - Unisonic Technologies

10N60 image

Número de pieza
10N60L-TF1-T

componentes Descripción

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page
8 Pages

File Size
389.1 kB

Fabricante
UTC
Unisonic Technologies 

DESCRIPTION
The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.


FEATURES
* RDS(ON) = 0.8Ω@VGS =10V
* Low gate charge ( typical 44nC)
* Low CRSS ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


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