RF LDMOS Wideband Integrated Power Amplifiers

The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband on-chip design makes it usable from 1805 to 1990 MHz. The linearity performances cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, TDMA, CDMA, W-CDMA and TD-SCDMA.

Final Application
• Typical Two-Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2 =
   170 mA, Pout = 15 Watts PEP, f = 1930 MHz
      Power Gain — 26 dB
      Power Added Efficiency — 28%
      IMD — -30 dBc

Driver Application
• Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 130 mA, IDQ2 =
   170 mA, Pout = 3 Watts Avg., Full Frequency Band (1805-1880 MHz or
   1930-1990 MHz)
      Power Gain — 27 dB
      Power Added Efficiency — 19%
      Spectral Regrowth @ 400 kHz Offset = -69 dBc
      Spectral Regrowth @ 600 kHz Offset = -78 dBc
      EVM — 0.8% rms
• Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW Output Power
• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 8 W CW Pout.

FEATUREs
• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel