BC337 Ver la hoja de datos (PDF) - Philips Electronics
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BC337 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistor
Product specification
BC337
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
0.2
UNIT
K/mW
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
BC337
BC337-16
BC337-25
BC337-40
DC current gain
VCEsat
VBE
Cc
fT
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
CONDITIONS
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 100 mA; VCE = 1 V;
see Figs 2, 3 and 4
IC = 500 mA; VCE = 1 V;
see Figs 2, 3 and 4
IC = 500 mA; IB = 50 mA
MIN.
−
−
−
TYP.
−
−
−
MAX. UNIT
100 nA
5
µA
100 nA
100 −
100 −
160 −
250 −
40 −
−
−
600
250
400
600
−
700 mV
IC = 500 mA; VCE = 1 V; note 1
−
−
IE = ie = 0; VCB = 10 V; f = 1 MHz −
5
IC = 10 mA; VCE = 5 V; f = 100 MHz 100 −
1.2 V
−
pF
−
MHz
Note
1. VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 15
3
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