BD158 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
fabricante
BD158 Datasheet PDF : 4 Pages
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BD157/158/159
Low Power Fast Switching Output Stages
• For T.V Radio Audio Output Amplifiers
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD157
: BD158
: BD159
VCEO
Collector-Emitter Voltage
: BD157
: BD158
: BD159
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
*Collector-Emitter Breakdown Voltage
: BD157
: BD158
: BD159
IC = 1mA, IB = 0
ICBO
Collector Cut-off Current
: BD157
: BD158
: BD159
IEBO
Emitter Cut-off Current
hFE
* DC Current Gain
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
VCB = 275V, IE = 0
VCB = 325V, IE = 0
VCB = 375V, IE = 0
VEB = 5V, IC = 0
VCE = 10V, IC = 50mA
Value
275
325
375
250
300
350
5
0.5
1.0
0.25
20
50
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Min. Typ. Max. Units
250
V
300
V
350
V
100 µA
100 µA
100 µA
100 µA
30
240
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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