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BF556A

N-channel silicon junction field-effect transistors

Philips Electronics 

Philips Semiconductors

N-channel silicon junction

field-effect transistors

Product specification

BF556A; BF556B; BF556C

100

handbGooosk, halfpage

(µS)

80

MRC153

60

40

20

0

0

−2

−4

−6

−8

VGSoff (V)

VDS = 15 V.

Fig.4 Common-source output conductance as a

function of gate-source cut-off voltage;

typical values.

300

handbook, halfpage

RDSon

(Ω)

200

MRC155

100

0

0

2

4

6

8

VGSoff (V)

VDS = 100 mV; VGS = 0.

Fig.5 Drain-source on-state resistance as a

function of gate-source cut-off voltage;

typical values.

5

handboIoDk, halfpage

(mA)

4

3

2

1

0

0

4

MRC145

VGS = 0 V

−0.5 V

−1 V

8

12

16

VDS (V)

handbook,1h6alfpage

ID

(mA)

12

8

4

0

0

4

MRC146

VGS = 0 V

−0.5 V

−1.0 V

−1.5 V

−2.0 V

−2.5 V

8

12

16

VDS (V)

Fig.6 Typical output characteristics; BF556A.

Fig.7 Typical output characteristics; BF556B.

1996 Jul 29

5

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