2N3958 Ver la hoja de datos (PDF) - Vishay Semiconductors
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2N3958 Datasheet PDF : 5 Pages
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2N3958
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
5
3
100 nA
Gate Leakage Current
4
2.6
IDSS
gfs
3
2.2
2
1.8
1
IDSS @ VDS = 15 V, VGS = 0 V
gfs @ VDG = 15 V, VGS = 0 V
1.4
f = 1 kHz
10 nA
1 nA
100 pA
IG @ ID = 200 mA
TA = 125_C
IGSS @ 125_C
200 mA
50 mA
50 mA
10 pA
1 pA
TA = 25_C
IGSS @ 25_C
0
1
0
–1
–2
–3
–4
–5
VGS(off) – Gate-Source Cutoff Voltage (V)
0.1 pA
0
10
20
30
40
50
VDG – Drain-Gate Voltage (V)
Output Characteristics
5
VGS(off) = –2 V
4
3
2
1
0
0
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–1.0 V
–1.2 V
–0.8 V
–1.4 V
4
8
12
16
20
VDS – Drain-Source Voltage (V)
Output Characteristics
5
VGS(off) = –3 V
VGS = 0 V
4
–0.3 V
–0.6 V
3
–0.9 V
2
–1.2 V
–1.5 V
1
–1.8 V
–2.1 V
0
0
4
8
12
16
VDS – Drain-Source Voltage (V)
–2.4 V
20
2
1.6
1.2
0.8
0.4
0
0
Output Characteristics
VGS(off) = –2 V
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
–1.4 V
–1.6 V
0.2
0.4
0.6
0.8
1
VDS – Drain-Source Voltage (V)
2.5
2.0
1.5
1.0
0.5
0
0
Output Characteristics
VGS(off) = –3 V
VGS = 0 V –0.3 V
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–1.8 V
–2.1 V
0.2
0.4
0.6
0.8
VDS – Drain-Source Voltage (V)
–2.4 V
1
Document Number: 70256
S-04031—Rev. B, 04-Jun-01
www.vishay.com
8-3
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