2N3958 Ver la hoja de datos (PDF) - Vishay Semiconductors
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2N3958 Datasheet PDF : 5 Pages
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2N3958
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Gate-Source Voltage
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Drain-Gate Capacitance
Equivalent Input Noise Voltage
Noise Figure
Matching
Symbol
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
VGS
VGS(F)
gfs
gos
Ciss
Crss
Cdg
en
NF
Test Conditions
IG = –1 mA, VDS = 0 V
VDS = 20 V, ID = 1 nA
VDS = 20 V, VGS = 0 V
VGS = –30 V, VDS = 0 V
TA = 150_C
VDG = 20 V, ID = 200 mA
TA =125_C
VDG = 20 V, ID = 200 mA
ID = 50 mA
IG = 1 mA, VDS = 0 V
VDS = 20 V, VGS = 0 V
f = 1 kHz
VDS = 20 V, VGS = 0 V
f = 1 MHz
VDG = 10 V, IS = 0 , f = 1 MHz
VDS = 20 V, VGS = 0 V, f = 1 kHz
VDS = 20 V, VGS = 0 V
f = 100 Hz, RG = 10 MW
Differential Gate-Source Voltage
Gate-Source Voltage Differential Change with
Temperature
|VGS1–VGS2|
D|VGS1–VGS2|
DT
VDG = 20 V, ID = 200 mA
VDG = 20 V, ID = 200 mA
TA = –55 to 125_C
Saturation Drain Current Ratio
Transconductance Ratio
Differential Output Conductance
IDSS1
IDSS2
gfs1
gfs2
|gos1–gos2|
VDS = 20 V, VGS = 0 V
VDS = 20 V, ID = 200 mA
f = 1 kHz
Differential Gate Current
|IG1–IG2|
VDG = 20 V, ID = 200 mA
TA = 125_C
Common Mode Rejection Ratioc
CMRR
VDG = 10 to 20 V, ID = 200 mA
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. This parameter not registered with JEDEC.
Limits
Min Typa Max Unit
–50
–57
V
–1.0
–2
–4.5
0.5
3
5
mA
–10
–100
pA
–20
–500
nA
–5
–50
pA
–0.8
–250
nA
–0.5
–1.5
–4
–4.2
V
2
1
2.5
3
mS
2
35
mS
3
4
1
1.2
pF
1.5
9
nV⁄
√Hz
0.5
dB
15
25
mV
20
100
mV/_C
0.85
0.97
1
0.85
0.97
1
0.1
0.1
10
100
mS
nA
dB
NQP
www.vishay.com
8-2
Document Number: 70256
S-04031—Rev. B, 04-Jun-01
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