STB12NK80Z Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

fabricante

STB12NK80Z

N-channel 800 V, 0.65Ωtyp., 10.5 A Zener-protected SuperMESH™ Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

STMicroelectronics 

Electrical ratings

STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z

Table 4. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAS

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS (starting Tj=25°C, Id=Iar, Vdd=50V)

Value

Unit

10.5

A

400

mJ

4/22

Doc ID 9567 Rev 7

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