STD1HNC60 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
fabricante
STD1HNC60 Datasheet PDF : 9 Pages
| |||
STD1HNC60
N-CHANNEL 600V - 4Ω - 2A - IPAK/DPAK
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STD1HNC60
600 V
<5Ω
2A
s TYPICAL RDS(on) = 4 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
IPAK
TO-251
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (1)
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
.
February 2001
Value
Unit
600
V
600
V
±30
V
2
A
1.3
A
8
A
50
0.4
3.5
–65 to 150
150
W
W/°C
V/ns
°C
°C
(1)ISD ≤ 2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
Share Link: 