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STB5NB60 Ver la hoja de datos (PDF) - STMicroelectronics

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fabricante
STB5NB60 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
®
STB5NB60
N - CHANNEL 600V - 1.8- 5A - I2PAK/D2PAK
PowerMESHMOSFET
TYPE
ST B5N B60
VDSS
RDS(on)
ID
600 V < 2.0
5A
s TYPICAL RDS(on) = 1.8
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
123
3
1
I2PAK
TO-262
(suffix ”-1”)
D2PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Value
600
600
± 30
5
3.1
20
100
0.8
4.5
-65 to 150
150
( 1) ISD 5A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
January 2000
1/9

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