STP80NF55L-06T4 Ver la hoja de datos (PDF) - STMicroelectronics
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STP80NF55L-06T4
STMicroelectronics
STP80NF55L-06T4 Datasheet PDF : 10 Pages
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STB80NF55L-06 STP80NF55L-06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 27 V
ID = 40 A
32
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 4.5 V
180
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 44V ID= 80A VGS= 5V
100
136
nC
18
nC
53
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 27 V
ID = 40 A
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 3)
Min.
Typ.
135
80
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 80 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 80 A
di/dt = 100A/µs
VDD = 25 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
100
310
6.2
Max.
80
320
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/10
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