STD4NS25 Ver la hoja de datos (PDF) - STMicroelectronics
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STD4NS25 Datasheet PDF : 9 Pages
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STD4NS25
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 125 V, ID = 2 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
VDD = 200V, ID = 4 A,
VGS = 10V
Min. Typ. Max. Unit
12
ns
18
ns
19
27
nC
3.2
nC
7.5
nC
SWITCHING OFF
) Symbol
Parameter
t(s td(Voff)
c tf
Turn-off- Delay Time
Fall Time
du tr(Voff)
ro tf
P tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 125V, ID = 2 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
Vclamp = 200V, ID = 4 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min.
Typ.
70
10.5
Max.
Unit
ns
ns
13
ns
10
ns
21.5
ns
lete SOURCE DRAIN DIODE
o Symbol
Parameter
Test Conditions
bs ISD
Source-drain Current
O ISDM (2) Source-drain Current (pulsed)
- VSD (1) Forward On Voltage
ISD = 4 A, VGS = 0
t(s) trr
Qrr
uc IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4 A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
d Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
ro 2. Pulse width limited by safe operating area.
Min. Typ.
124
0.5
7.2
Obsolete P Safe Operating Area
Thermal Impedance
Max.
4
16
1.5
Unit
A
A
V
ns
µC
A
3/9
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