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STD20NF10T4

N-channel 100V - 0.038Ω - 100A - DPAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STD20NF10

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage (VGS = 0)

VDGR

Drain-gate voltage (RGS = 20 kΩ)

VGS

ID (1)

Gate- source voltage

Drain current (continuous) at TC = 25°C

ID

IDM(2)

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Ptot

Total dissipation at TC = 25°C

Derating Factor

dv/dt(3) Peak diode recovery avalanche energy

EAS (4)

Single pulse avalanche energy

Tstg

Storage temperature

Tj

Max. operating junction temperature

1. Current limited by package

2. Pulse width limited by safe operating area.

3. ISD ≤25A, di/dt ≤300A/µs, VDD =V(BR)DSS, Tj ≤TJMAX

4. Starting Tj = 25 °C, ID = 10A, VDD = 27V

Value

100

100

± 20

25

21

100

85

0.57

20

300

-55 to 175

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

°C

Table 3. Thermal data

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

TJ

Maximum lead temperature for soldering purpose

1.76

°C/W

100

°C/W

300

°C

3/13

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