D12V0H1U2LP1610 Ver la hoja de datos (PDF) - Diodes Incorporated.
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D12V0H1U2LP1610 Datasheet PDF : 5 Pages
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Current
Peak Pulse Power Dissipation
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
IPP
PPP
VESD_CONTACT
VESD_AIR
Value
50
1,000
±30
±30
D12V0H1U2LP1610
Unit
Conditions
A
8/20µs (Note 7)
W
8/20µs (Note 7)
kV
Standard IEC 61000-4-2
kV
Standard IEC 61000-4-2
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient TA = +25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Reverse Standoff Voltage
Channel Leakage Current (Note 6)
Reverse Breakdown Voltage
VRWM
—
IR
—
VBR
13
—
Clamping Voltage, Positive Transients (Note 7)
VC
—
—
Channel Input Capacitance (Note 8)
CT
—
Dynamic Resistance
RDYN
—
Typ
—
—
—
—
—
—
350
0.05
Max
12
0.1
—
15.5
16.5
20.0
—
—
Unit
V
µA
V
V
V
V
pF
Ω
Test Conditions
—
VR = 12.0V
IR = 1mA
IPP = 1A, tP = 8/20μs
IPP = 10A, tP = 8/20μs
IPP = 50A, tP = 8/20μs
VR = 0V, f = 1MHz, Any I/O to
GND
TLP, 10A, tP = 100ns
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. website at http://www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (IPP) waveform.
8. Measured from any I/O to GND.
9. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL: http://www.diodes.com/destools/appnote_dnote.html.
D12V0H1U2LP1610
Document number: DS38333 Rev. 1 - 2
2 of 5
www.diodes.com
May 2016
© Diodes Incorporated
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