2N5550S Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

fabricante

2N5550S

High Voltage Transistors

Unspecified 

2N5550S 2N5551S

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max Unit

ON CHARACTERISTICS

DC Current Gain

(I C = 1.0 mAdc, V CE = 5.0 Vdc)

(I C = 10 mAdc, VCE = 5.0 Vdc)

(I C = 50 mAdc, VCE = 5.0Vdc)

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

2N5550S

2N5551S

2N5550S

2N5551S

2N5550S

2N5551S

Both Types

2N5550S

2N5551S

Both Types

2N5550S

2N5551S

h FE

60

80

60

80

20

30

V CE(sat)

––

––

––

V BE(sat)

––

––

––

––

––

––

250

250

––

––

Vdc

0.15

0.25

0.20

Vdc

1.0

1.2

1.0

2011. 01. 12

Revision No : 2

2/5

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