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SS8050

Silicon Epitaxial Planar Transistor

Shenzhen Luguang Electronic Technology Co., Ltd 

SS8050

Silicon Epitaxial Planar Transistor

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0

40

V

Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO IE=100μA,IC=0

6

V

Collector cut-off current

Collector cut-off current

ICBO

VCB=35V,IE=0

ICEO

VCE=20V,IB=0

0.1 μA

0.1 μA

Emitter cut-off current

IEBO

VEB=6V,IC=0

0.1 μA

DC current gain

hFE

Collector-emitter saturation voltage VCE(sat)

Base-emitter saturation voltage

VBE(sat)

Base-emitter voltage

VBE

Output capacitance

Cob

Transition frequency

fT

VCE=1V,IC=100mA

VCE=1V,IC=800mA

IC=800 mA, IB= 80mA

IC=800 mA, IB= 80mA

VCE=1V IC=10mA

VCB=10V, IE=0

f=1MHz

VCE=10V, IC= 50mA

f=30MHz

120

400

40 110

0.28 0.5 V

0.98 1.2 V

0.66 1

V

9.0

pF

100 190

MHz

CLASSIFICATION OF hFE(1)

Rank

L

Range

120-200

H

200-350

J

300-400

Revision:20170701-P1

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mail:lge@lgesemi.com

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