AO4406A Ver la hoja de datos (PDF) - KEXIN Industrial

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fabricante

AO4406A

N-Channel MOSFET

KEXIN Industrial 

SMD Type

MOSFET

N-Channel MOSFET

AO4406A (KO4406A)

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Drain-Source Breakdown Voltage

VDSS ID=250 uA, VGS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

IDSS

IGSS

VDS=30V, VGS=0V

VDS=30V, VGS=0V, TJ=55℃

VDS=0V, VGS=±20V

Gate Threshold Voltage

VGS(th) VDS=VGS , ID=250uA

Static Drain-Source On-Resistance

RDS(On)

VGS=10V, ID=12A

VGS=10V, ID=12A TJ=125℃

VGS=4.5V, ID=10A

On State Drain Current

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Maximum Body-Diode Continuous Current

Diode Forward Voltage

ID(ON)

gFS

Ciss

Coss

Crss

Rg

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

trr

Qrr

IS

VSD

VGS=10V, VDS=5V

VDS=5V, ID=12A

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=15V, ID=12A

VGS=10V, VDS=15V, RL=1.25Ω,

RGEN=3Ω

IF= 12A, dI/dt= 500A/us

IS=1A,VGS=0V

Min Typ Max Unit

30

V

1

uA

5

±100 nA

1.5

2.5 V

11.5

17 mΩ

15.5

100

A

45

S

610

910

88

160 pF

40

100

0.8

2.4 Ω

11

17

5

8

nC

1.9

2.9

1.8

4.2

4.4

9

17

ns

6

5.6

8

6.4

9.6 nC

4

A

1

V

Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.

■ Marking

Marking

4406A

KC****

2 www.kexin.com.cn

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