AP6924GEY(2003) Ver la hoja de datos (PDF) - Advanced Power Electronics Corp
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AP6924GEY Datasheet PDF : 4 Pages
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Advanced Power
Electronics Corp.
AP6924GEY
Pb Free Plating Product
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
▼ Low On-Resistance
▼ Fast Switching Characteristic
▼ Included Schottky Diode
K
S
D
SOT-26
A
GA
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
G
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
D
S
20V
600mΩ
1A
A
K
Absolute Maximum Ratings
Symbol
Parameter
VDS
VKA
VGS
ID@TA=25℃
ID@TA=70℃
IDM
IF
IFM
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current3 (MOSFET)
Continuous Drain Current3 (MOSFET)
Pulsed Drain Current1 (MOSFET)
Average Forward Current (Schottky)
Pulsed Forward Current1 (Schottky)
PD@TA=25℃
Total Power Dissipation (MOSFET)
Total Power Dissipation (Schottky)
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
20
±6
1
0.8
8
0.5
2
0.9
0.9
-55 to 125
-55 to 125
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient 3 (MOSFET)
Thermal Resistance Junction-ambient 3 (Schottky)
Max.
Max.
Value
110
110
Units
V
V
V
A
A
A
A
A
W
W
℃
℃
Units
℃/W
℃/W
Data and specifications subject to change without notice
200301051
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