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BTA316-600ET Datasheet PDF : 14 Pages
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NXP Semiconductors
BTA316-600ET
3Q Hi-Com Triac
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
tgt
gate-controlled turn-on
time
Conditions
Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; -
-
10 mA
see Figure 7
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; -
-
10 mA
see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C;
-
-
10 mA
see Figure 7
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 8
-
-
25 mA
VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; -
-
30 mA
see Figure 8
VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; -
-
30 mA
see Figure 8
VD = 12 V; Tj = 25 °C; see Figure 9
IT = 18 A; Tj = 25 °C; see Figure 10
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 11
-
-
15 mA
-
1.3 1.5 V
-
0.8 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 150 °C;
see Figure 11
0.25 -
-
V
VD = 600 V; Tj = 150 °C
-
0.24 1.2 mA
VDM = 402 V; Tj = 150 °C; exponential
waveform; gate open circuit
20 -
-
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
1.2 -
-
dVcom/dt = 10 V/µs; gate open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
0.8 -
-
dVcom/dt = 20 V/µs; "without snubber"
condition; gate open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
6
-
-
dVcom/dt = 1 V/µs; gate open circuit
ITM = 20 A; VD = 600 V; IG = 0.1 A;
dIG/dt = 5 A/µs
-
2
-
V/µs
A/ms
A/ms
A/ms
µs
BTA316-600ET
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 November 2010
© NXP B.V. 2010. All rights reserved.
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