RT8207L/M
Parameter
Driver On-Resistance
UGATE Driver Source
UGATE Driver Sink
LGATE Driver Source
LGATE Driver Sink
Dead Time
Internal Boost Charging
Switch On Resistance
Logic I/O
Logic Input Low Voltage
Logic Input High Voltage
Logic Input Current
Symbol
RUGATEsr
RUGATEsk
RLGATEsr
RLGATEsk
Test Conditions
BOOT PHASE Forced to 5V
BOOT PHASE Forced to 5V
DL, High State
DL, Low State
LGATE Rising (PHASE = 1.5V)
UGATE Rising
VDDP to BOOT, 10mA
S3, S5 Low
S3, S5 High
S3, S5 = VDD/GND
Min Typ Max Unit
--
2.5
5
--
1.5
3
--
2.5
5
-- 0.8 1.6
--
40
--
ns
--
40
--
--
--
80
--
-- 0.8 V
2
--
--
V
1
0
1
A
PGOOD (upper side threshold decide by Over Voltage threshold)
Trip Threshold (Falling)
Measured at FB, with respect to
reference, no load
13 10 7 %
Trip Threshold (Hysteresis)
--
3
--
%
Fault Propagation Delay
Output Low Voltage
Leakage Current
ILEAK
Falling edge, FB forced
PGOOD trip threshold
ISINK = 1mA
High state, forced to 5V
below
--
2.5
--
s
--
-- 0.4 V
--
--
1
A
VTT LDO
VTT Output Tolerance
VVDDQ = VLDOIN = 1.2V/1.35/1.5V/1.8V,
IVTT = 0A
20
--
VVTTTOL
VVDDQ = VLDOIN = 1.2V/1.35/1.5V/1.8V,
IVTT < 1A
30
VVDDQ = VLDOIN = 1.2V/1.35,
IVTT < 1.2A
40
--
--
VVDDQ = VLDOIN = 1.5V/1.8V,
IVTT < 1.5A
40 --
20
30
mV
40
40
VTT Source Current Limit
IVTTOCLSRC
VTT
VVDDQ
2
0.95
PGOOD = High
1.6 2.6 3.6
A
VTT = 0V
--
1.3
--
VTT Sink Current Limit
IVTTOCLSNK
VTT
VVDDQ
2
1.05
,
PGOOD = High
1.6 2.6 3.6
A
VTT = VVDDQ
--
1.3
--
VTT Leakage Current
IVTTLK
S5 = 5V, S3 = 0V,
VTT
VVDDQ
2
10 --
VTTSNS Leakage Current IVTTSNSLK ISINK = 1mA
1
--
VTT Discharge Current
IDSCHRG
VVDDQ = 0V, VTT = 0.5V, S5 = S3 =0V
10
30
10 A
1
A
-- mA
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DS8207L/M-08 September 2016