TJ90S04M3L Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
fabricante
TJ90S04M3L Datasheet PDF : 10 Pages
| |||
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ90S04M3L
1. Applications
• Automotive
• Motor Drivers
• DC-DC Converters
• Switching Voltage Regulators
2. Features
(1) AEC-Q101 qualified
(2) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(4) Enhancement mode: Vth = -1.0 to -2.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TJ90S04M3L
1: Gate
2: Drain (heatsink)
3: Source
DPAK+
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-40
V
Gate-source voltage
VGSS
+10/-20
Drain current (DC)
(Note 1)
ID
-90
A
Drain current (pulsed)
(Note 1)
IDP
-180
Power dissipation
(Tc = 25 )
(Note 2)
PD
180
W
Single-pulse avalanche energy
(Note 3)
EAS
156
mJ
Single-pulse avalanche current
IAS
-90
A
Channel temperature
(Note 4)
Tch
175
Storage temperature
(Note 4)
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
©2016-2018
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2017-01
2018-05-09
Rev.3.0
Share Link: 