SI2333CDS Ver la hoja de datos (PDF) - KEXIN Industrial

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SI2333CDS

P-Channel Enhancement MOSFET

KEXIN Industrial 

SMD Type

MOSFET

P-Channel Enhancement MOSFET

SI2333CDS (KI2333CDS)

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Drain-Source Breakdown Voltage

VDSS

Zero Gate Voltage Drain Current

IDSS

Gate-Body leakage current

Gate Threshold Voltage

IGSS

VGS(th)

Static Drain-Source On-Resistance *1

RDS(On)

On state drain current *1

Forward Transconductance *1

Gate Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

ID(ON)

gFS

Rg

Ciss

Coss

Crss

Qg

Test Conditions

ID=-250μA, VGS=0V

VDS=-12V, VGS=0V

VDS=-12V, VGS=0V, TJ=55℃

VDS=0V, VGS=±8V

VDS=VGS ID=-250μA

VGS=-4.5V, ID=-5.1A

VGS=-2.5V, ID=-4.5A

VGS=-1.8V, ID=-2.0A

VGS=-4.5V, VDS=-5V

VDS=-5V, ID=-1.9A

f=1.0MHz

VGS=0V, VDS=-6V, f=1MHz

VGS=-4.5V, VDS=-6V, ID=-5.1A

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Time

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Maximum Body-Diode Continuous Current

Pulse Diode Forward Current *1

Diode Forward Voltage

Qgs

Qgd

td(on)

tr

td(off)

tf

Qrr

trr

ta

tb

IS

ISM

VSD

VGS=-2.5V, VDS=-6V, ID=-5.1A

VGS=-4.5V, VDS=-6V, RL=6Ω,RGEN=1Ω

ID=-1.0A

IF = 1.0 A, di/dt = 100 A/ us,TJ=25℃

TC=25℃

IS=-1.0A,VGS=0V

Min Typ Max Unit

-12

V

-1

μA

-10

±100 nA

-0.4

-1

V

28. 5 35

36 45 mΩ

46 59

-20

A

1.6

S

4.0

Ω

1225

315

pF

260

15 25

9 15

nC

1.9

3.8

13 20

35 60

ns

45 70

12 20

20 40 nC

32 50

16

ns

16

-1.0

A

-20

-0.7 -1.2 V

*1Pulse test: PW ≤ 300us duty cycle ≤ 2%.

■ Marking

Marking

O3*

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