STP10NM60N Ver la hoja de datos (PDF) - Inchange Semiconductor
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STP10NM60N Datasheet PDF : 2 Pages
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Isc N-Channel MOSFET Transistor
STP10NM60N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
600
V
VGS(th)
Gate Threshold Voltage
VDS= ±25V; ID=0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=4A
60
65
mΩ
IGSS
IDSS
VSDF
Gate-Source Leakage Current
VGS= ±25V;VDS= 0V
Drain-Source Leakage Current
VDS= 600V; VGS= 0V；TJ=25℃
TJ=125℃
Diode forward voltage
ISD=8A, VGS = 0 V
±0.1 μA
1
100
μA
1.3
V
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
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