LL3303 Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
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LL3303 Datasheet PDF : 8 Pages
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LL3303
www.VBsemi.tw
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 10 V
VDS = 30 V
VDS = 30 V, TJ = 125 °C
VDS = 30 V, TJ = 175 °C
VDS5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V
VGS = 4.5 V
VGS = 10 V
ID = 6 A
ID = 4.9 A
ID = 6 A, TJ = 125 °C
VGS = 10 V
ID = 6 A, TJ = 175 °C
Forward Transconductanceb
gfs
VDS = 15 V, ID = 5 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 15 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
VGS = 10 V
VDS = 15 V, ID = 6 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 15 V, RL = 2.5
ID 6 A, VGEN = 10 V, Rg = 1
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 3 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
30
0.5
-
-
-
-
10
-
-
-
-
-
-
-
-
-
-
-
3.0
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
-
1.5
-
± 100 nA
-
1
-
50
μA
-
150
-
-
A
0.019
-
0.021
-
-
0.054
-
0.064
21
-
S
295
-
67
-
pF
25
-
6
-
1.2
-
nC
1
-
6.65 11
6
9
12
18
ns
13
20
8
12
-
31
A
0.8
1.1
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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