UES1104 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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fabricante

UES1104

RECTIFIERS High Efficiency, 2A

New Jersey Semiconductor 

LJES804

UESB04HR2

UES805

UES806HR2

UES806

UES806HR2

Maximum Forward Surge

vs. Number of Cycles

X 600

500

s.

\H i c

*o

V

\E

300

\-

/ 200

K-

100

II

2

i 10 20

50 100 200

N — CYCLES OF 60 HI SINEWAVE

Thermal Impedance

<n. fain Width

«^-

Ss s r^

s/

/*

y

/

/

/

102 .05.1 .J .! » Z $ 1020 50100200 1«

I,— PULSE WIDTH (mS>

Reverse-Recovery Circuit

1

v1

1DQ

-»v

i

Me ,

VOX.)

~^

„

PULSE

NDTtS:

1. Otcilloseop*: Rise time ^ 3n»; input impedance = 900.

2. Pulse Generator; Rise time < 8ns; source Impedance 100.

3. Current viewing resistor, non-inductive, coaxial recommended.

OPTIONAL HIGH RELIABILITY (HR2) SCREENING

The fallowing to*U are performed on 100% of the devices spedfW UES804HR2.5HR2,6HR2.

SCREEN

1. High Temperature

2. Temperature Cycle

3. Hermetic Seal

a. Fine Leak

b. Gross Leak

4. Thermal Impedance

b. Interim Electrical Parameters

6. High Temperature Reverse Blocking

7. Final Electrical Parameters

MIL-STD-750

METHOD

1032

1051

1071

GO/NO GO

Similar to

Method 1040

GO/NO GO

CONDITIONS

24 Hours & TA . 150°C

F, 20 Cycles, -55 to +150*0 No dwell required

@ 25°C, t > 10 min. ® extremes

H, Helium

C, Liquid

Sage Test

VFandlR(025°C

W Sine Reverse, t = 48 Hours, Tc - 125<C, VRWM

= rating, F = 5O-60 Hz, lo - OA

VF + IR025-C

PDA - 10% (Final Etocthcals)

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