MMFT5P03HDT3 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
fabricante
MMFT5P03HDT3 Datasheet PDF : 12 Pages
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MMFT5P03HD
TYPICAL ELECTRICAL CHARACTERISTICS
10
VGS = 10 V
8V
8
6V
6 TJ = 25°C
4.5 V
4.3 V
4.1 V
3.9 V
3.7 V
4
3.5 V
3.3 V
2
3.1 V
2.7 V
00
0.4
0.8
1.2
1.6
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
10
VDS ≥ 10 V
8
6
4
2
TJ = 100°C
25°C
-ā55°C
2
02
2.5
3
3.5
4
4.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0.3
0.3
ID = 4 A
TJ = 25°C
TJ = 25°C
0.2
0.2
VGS = 4.5 V
0.1
0.1
10 V
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2
VGS = 10 V
ID = 2 A
1.5
1
0.5
1000
VGS = 0 V
100
10
1
0.1
TJ = 125°C
100°C
25°C
-0Ă50 -Ă25
0
25 50 75 100 125 150
00.1
0
6
12
18
24
30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
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