HSMS-2865 Ver la hoja de datos (PDF) - HP => Agilent Technologies
Número de pieza
componentes Descripción
fabricante
HSMS-2865 Datasheet PDF : 6 Pages
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3
Absolute
Maximum
Ratings[1]
T
A
=
25°C
Symbol
Parameter
Value
If
Forward Current (1 ms Pulse)
1 Amp
Pt
Total Device Dissipation
250 mW[2]
PIV
Peak Inverse Voltage
Same as V
BR
Tj
Junction Temperature
150°C
Tstg
Storage Temperature
-65 to 150°C
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device.
2. CW Power Dissipation at TLEAD = 25°C. Derate to zero at maximum rated
temperature.
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. HP defines this
measurement as “CM”, and it is
equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent
capacitances can then be
calculated by the formulas given
below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
CDIAGONAL = _C_1_x__C_2_ + _C_3__x_C__4
C1 + C2 C3 + C4
C1
C
C2
A
C3
C4
B
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
CADJACENT = C1 + _______1_____
11 1
–– + –– + ––
C2 C3 C4
This information does not apply
to cross-over quad diodes.
SPICE Parameters
Parameter Units
BV
V
CJ0
pF
EG
eV
IBV
A
IS
A
N
RS
Ω
PB
V
PT
M
HSMS-280X
75
1.6
0.69
10E-5
3 x 10E - 8
1.08
30
0.65
2
0.5
HSMS-281X
25
1.1
0.69
10E-5
4.8 x 10E - 9
1.08
10
0.65
2
0.5
HSMS-282X
15
0.7
0.69
10E-4
2.2 x 10E -8
1.08
6.0
0.65
2
0.5
HSMS-286X
7.0
0.18
0.69
10E-5
5.0 x 10E -8
1.08
5.0
0.65
2
0.5
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