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TC7MP97FT(EL)

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

Toshiba 

Electrical Characteristics

DC Characteristics (Ta = −40 to 85°C)

TC7MP97,98FT/FK

Characteristics

H-level

Input voltage

L-level

Hysteresis voltage

H-level

Output voltage

L-level

Input leakage current

Power-off leakage current

Quiescent supply current

Increase in ICC per input

Symbol

Test Condition

Min

VCC (V)

1.2

Max

Unit

1.10

1.4

1.20

VP

⎯

1.65

1.35

V

2.3

1.70

3.0

2.00

3.6

2.20

1.2

0.10

1.4

0.20

VN

⎯

1.65

0.30

V

2.3

0.50

3.0

0.70

3.6

0.80

1.2

0.2

0.9

1.4

0.2

0.9

VH

⎯

1.65

0.2

0.95

V

2.3

0.3

1.0

3.0

0.3

1.2

3.6

0.3

1.2

IOH = −100 μA

1.2~1.3 Vcc - 0.1

⎯

IOH = −500 μA

1.4~1.6 Vcc - 0.2

⎯

VOH VIN = VIH or VIL

IOH = −1.5 mA

1.65~1.95 Vcc - 0.3

⎯

IOH = −4.0 mA

2.3~2.7 Vcc - 0.4

⎯

IOH = −8.0 mA

3.0~3.6

2.40

⎯

V

IOL = 100 μA

1.2~1.3

⎯

0.10

IOL = 500 μA

1.4~1.6

⎯

0.20

VOL VIN = VIH or VIL

IOL = 3.0 mA

1.65~1.95

⎯

0.25

IOL = 4.0 mA

2.3~2.7

⎯

0.40

IOL = 8.0 mA

3.0~3.6

⎯

0.40

IIN VIN = 0~3.6 V

1.2~3.6

⎯

±5.0

μA

IOFF VIN, VOUT = 0~3.6 V

0

⎯

10.0

μA

VIN = VCC or GND

ICC

VCC <= VIN <= 3.6 V

1.2~3.6

⎯

20.0

1.2~3.6

⎯

±20.0

μA

ΔICC VIH = VCC − 0.6 V

2.7~3.6

⎯

750

7

2007-10-19

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