7N60ZG-A-TQ2-R Ver la hoja de datos (PDF) - Unisonic Technologies

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fabricante

7N60ZG-A-TQ2-R

7.4 Amps, 600/650 Volts N-CHANNEL MOSFET

Unisonic Technologies 

7N60Z

„ ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS = 0V, IS = 7.4 A

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

tRR

VGS = 0V, IS = 7.4 A,

Reverse Recovery Charge

QRR

dIF / dt = 100A/μs (Note 1)

Notes: 1. Pulse Test: Pulse width≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

Power MOSFET

MIN TYP MAX UNIT

1.4 V

7.4 A

29.6 A

320

ns

2.4

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-349.B

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