MJE13005A Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd

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componentes Descripción

fabricante

MJE13005A

Switchmode Series NPN Silicon Power Transistors (4A / 400V / 75W)

Nell Semiconductor Co., Ltd 

SEMICONDUCTOR

Fig.1 DC current gain

100

70

TJ = 150°C

50

25°C

30

20

-55°C

10

VCE = 2V

7

VCE = 5V

5

0.04 0.06 0.1 0.2 0.4 0.6 1

2

4

Collector current, IC (A)

Fig.3 VBE - IC characteristics (Typical)

1.3

1.1

VBE(sat) @ lC / lB = 4

VBE(on) @ VCE = 2V

0.9

TJ = -55°C

25°C

0.7

25°C

0.5

150°C

0.3

0.04 0.06 0.1 0.2 0.4 0.6 1

2

4

Collector current, lC (A)

Fig.5 Collector cutoff region

10K

1K

100

10

VCE = 250V

TJ = 150°C

125°C

100°C

75°C

1

0.1

-0.4

50°C

25°C

REVERSE

-0.2

0

FORWARD

0.2

0.4

0.6

Base-Emitter voltage, VBE (V)

MJE13005A(NPN) RRooHHSS

Nell High Power Products

Fig.2 VCE(sat) - IB characteristics (Typical)

2

1.6

lC = 1A

1.2

TJ = 25°C

2A

3A 4A

0.8

0.4

0

0.03 0.05 0.1 0.2 0.3 0.5 0.7 1

Base current, IB (A)

23

Fig.4 VCE(sat) - IC characteristics (Typical)

0.55

lC / lB = 4

0.45

0.35

0.25

25°C

TJ = -55°C

0.15

150°C

0.05

0.04 0.06 0.1 0.2 0.4 0.6 1

2

4

Collector current, lC (A)

Fig.6 Capacitance

2K

1K

700

500

300

200

100

70

50

30

20

0.3

C ib

0.5 1

3 5 10 30

C ob

50 100 300

Reverse voltage, VR (V)

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