2N5010 Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc
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2N5010 Datasheet PDF : 1 Pages
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2N5010
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
SILICON EPITAXIAL
NPN TRANSISTOR
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45°
TO–39 (TO-205AD) PACKAGE
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCER
VEBO
IC
PTOT
TJ,TSTG
RθJC
Collector – Base Voltage
Collector – Emitter Voltage
R = 10Ω
Emitter – Base Reverse Voltage
Continuous Collector Current
Total Device Dissipation
TC = 25°C
Maximum Storage and Junction Temperature Range
Thermal Impedance Junction To Case
500V
500V
5V
0.5A
2W
200°C
50°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max. Unit
ICBO
Collector Base Leakage Current
VCB = 500V
0.006 mA
hFE
D.C Current Gain
ft
Transition Frequency
VCE = 10V
IC =0.025A
30
180 —
20
MHz
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3696
Issue 1
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