SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
VCEX
VEBO
Collector-Emitter Voltage
Collector-Emitter Voltage
VEB= 5V
Emitter-Base Voltage
450
V
600
V
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
PT
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
8
A
45
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 2.77 ℃/W
SPTECH website:www.superic-tech.com
2SC4056
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