2SB554 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

fabricante

2SB554

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC=30mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A

VBE(on) Base-Emitter On Voltage

IC= 10A ; VCE= 5V

ICBO

Collector Cutoff Current

VCB= 90V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 2A ; VCE= 5V

fT

Current-Gain—Bandwidth Product

IC= 2A ; VCE= 5V

COB

Output Capacitance

IE= 0 ; VCB= 10V; f= 1MHz

 hFE-2 Classifications

R

O

40-80

70-140

2SB554

MIN TYP. MAX UNIT

-180

V

-5

V

-3.0

V

-2.5

V

-0.1 mA

-0.1 mA

40

140

5

MHz

300

pF

SPTECH website：www.superic-tech.com

2

Share Link: