PMBD6100 Ver la hoja de datos (PDF) - NXP Semiconductors.

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PMBD6100

High-speed double diode

NXP Semiconductors. 

NXP Semiconductors

High-speed double diode

Product data sheet

PMBD6100

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• General application

• Continuous reverse voltage:

max. 70 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 450 mA.

DESCRIPTION

The PMBD6100 consists of two

high-speed switching diodes with

common cathodes, fabricated in

planar technology, and encapsulated

in the small SOT23 plastic SMD

package.

PINNING

PIN

1

2

3

DESCRIPTION

anode (a1)

anode (a2)

common cathode

APPLICATIONS

• High-speed switching in surface

mounted circuits.

MARKING

TYPE NUMBER

PMBD6100

MARKING

CODE(1)

∗5B

Note

1. ∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

∗ = W : Made in China.

handbook, 4 columns

2

1

3

Top view

2

1

3

MAM108

Fig.1 Simplified outline (SOT23) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

Per diode

VRRM

VR

IF

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

single diode loaded; note 1;

see Fig.2

double diode loaded; note 1;

see Fig.2

MIN. MAX. UNIT

−

85

V

−

70

V

−

215

mA

−

125

mA

2003 Mar 25

2

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