2SB688 Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

fabricante

2SB688

PNP EPITAXIAL SILICON TRANSISTOR

Unspecified 

SEMICONDUCTOR

TECHNICAL DATA

PNP EPITAXIAL SILICON TRANSISTOR

HIGH POWER AMPLIFIER APPLICATION

FEATURES

* Complementary to 2SD718.

* Recommended for 45 ~ 50W Audio Frequency Amplifier

Output Stage.

2SB688

1

TO-3P

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃)

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter Base Voltage

Collector Current

Base Current

Collector Power Dissipation (TC=25℃)

Junction Temperature

Storage Temperature Range

SYMBOL

VCBO

VCEO

VEBO

IC

IB

PC

TJ

TSTG

1: BASE 2: COLLECTOR 3: EMITTER

*Pb-free plating product number: 2SB688L

RATINGS

-120

-120

-5

-10

-1

80

150

-40 ~ +150

UNIT

V

V

V

A

A

W

℃

℃

ELECTRICAL CHARACTERISTICS

(Ta=25℃)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

SYMBOL

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE

fT

Cob

TEST CONDITIONS

VCB = -120V, IE = 0

VEB = -5V, IC = 0

IC = -50mA, IB= 0

VCE = -5V, IC = -1A

IC = -5A, IB = -0.5A

VCE = -5A, IC= -5A

VCE = -5A, IC= -1A

VCB = -10V, IE = 0, f=1MHz

CLASSIFICATION OF hFE

RANK

RANGE

R

55 ~ 110

MIN

-120

55

TYP MAX

-10

-10

160

-2.5

-1.5

10

280

UNIT

µA

µA

V

V

V

MHz

pF

O

80 ~ 160

2011. 02. 22

Revision No : 0

1/2

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