M28F101
Table 9A. Read Only Mode AC Characteristics
(TA = 0 to 70 °C, –40 to 85 °C or –40 to 125 °C; 0V ≤ VPP ≤ 6.5V)
M28F101
Symbol Alt
Parameter
Test Condition
-70
VCC=5V±5%
SRAM
Interface
-90
-100
VCC=5V±10% VCC=5V±10%
EPROM
Interface
EPROM
Interface
Unit
Min Max Min Max Min Max
tWHGL
Write Enable High to
Output Enable Low
6
6
6
µs
tAVAV
tRC Read Cycle Time
E = VIL, G = VIL 70
90
100
ns
tAVQV
tACC
Address Valid to
Output Valid
E = VIL, G = VIL
70
90
100 ns
tELQX (1)
tL Z
Chip Enable Low to
Output Transition
G = VIL
0
0
0
ns
tELQV
tCE
Chip Enable Low to
Output Valid
G = VIL
70
90
100 ns
tGLQX (1)
tOLZ
Output Enable Low to
Output Transition
E = VIL
0
0
0
ns
tGLQV
tOE
Output Enable Low to
Output Valid
E = VIL
40
40
45 ns
tEHQZ (1)
Chip Enable High to
Output Hi-Z
G = VIL
0
30
0
45
0
45 ns
tGHQZ (1)
tDF
Output Enable High to
Output Hi-Z
E = VIL
0
30
0
30
0
30 ns
tAXQX
tOH
Address Transition to
Output Transition
E = VIL, G = VIL
0
0
0
ns
Note: 1. Sampled only, not 100% tested
Read Mode. The Read Mode is the default at
power up or may be set-up by writing 00h to the
command register. Subsequent read operations
output data from the memory. The memory remains
in the Read Mode until a new command is written
to the command register.
Electronic Signature Mode. In order to select the
correct erase and programming algorithms for on-
board programming, the manufacturer and device
codes may be read directly. It is not neccessary to
apply a high voltage to A9 when using the com-
mand register. The Electronic Signature Mode is
set-up by writing 90h to the command register. The
following read cycles, with address inputs 00000h
or 00001h, output the manufacturer or device type
codes. The command is terminated by writing an-
other valid command to the command register (for
example Reset).
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