IRF620A Ver la hoja de datos (PDF) - Inchange Semiconductor
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IRF620A Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF620A
FEATURES
·Low RDS(on) = 0.626Ω(TYP)
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
V
±30
V
ID
Drain Current-Continuous
5
A
IDM
Drain Current-Single Pluse
18
A
PD
Total Dissipation @TC=25℃
47
W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
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