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ATP214

N-Channel Power MOSFET

ON Semiconductor 

Ordering number : ENA1712A

ATP214

N-Channel Power MOSFET

60V, 75A, 8.1mΩ, Single ATPAK

http://onsemi.com

Features

• ON-resistance RDS(on)1=6.2mΩ(typ.)

• 4V drive

• Protection diode in

• Input Capacitance Ciss=4850pF(typ.)

• Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (PW≤10μs)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

Note :*1 VDD=15V, L=100μH, IAV=38A

*2 L≤100μH, Single pulse

Symbol

VDSS

VGSS

ID

IDP

PD

Tch

Tstg

EAS

IAV

Conditions

PW≤10μs, duty cycle≤1%

Tc=25°C

Ratings

Unit

60

V

±20

V

75

A

225

A

60

W

150

°C

--55 to +150

°C

94 mJ

38

A

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

7057-001

6.5

4

1.5

0.4

ATP214-TL-H

4.6

2.6

0.4

Product & Package Information

• Package

: ATPAK

• JEITA, JEDEC

:-

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

TL

Marking

ATP214

LOT No.

2

1

3

0.8

0.6

2.3 2.3

0.55

0.4

1 : Gate

2 : Drain

3 : Source

4 : Drain

ATPAK

Electrical Connection

2,4

1

3

Semiconductor Components Industries, LLC, 2013

July, 2013

62012 TKIM/70710PA TKIM TC-00002343 No. A1712-1/7

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