CS60-12IO1_15 Ver la hoja de datos (PDF) - IXYS CORPORATION
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CS60-12IO1_15 Datasheet PDF : 5 Pages
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CS60-12io1
Thyristor
120
100
80
IT
60
[A]
40
20
125°C
150°C
TVJ = 25°C
0
0,4
0,8
1,2
1,6
VT [V]
Fig. 1 Forward characteristics
1200
50 Hz, 80% VRRM
1000
ITSM
800
[A]
600
TVJ = 45°C
TVJ = 125°C
400
0,01
0,1
1
t [s]
Fig. 2 Surge overload current
10000 VR = 0 V
I2t
[A2s]
TVJ = 45°C
TVJ = 125°C
1000
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time (1-10 ms)
10
1: IGD, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
1
[V]
4
23
1
6
5
1000
100
tgd
[µs]
10
typ.
Limit
TVJ = 125°C
0,1
1
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
10 100 1000 10000
IG [mA]
Fig. 4 Gate trigger characteristics
1
10
100
1000
IG [mA]
Fig. 5 Gate controlled delay time
100
80
IT(AV)M 60
[A] 40
dc =
1
0.5
0.4
0.33
0.17
0.08
20
0
0 25 50 75 100 125 150
TC [°C]
Fig. 6 Max. forward current
at case temperature
100
80
60
P(AV)
40
[W]
dc =
1
0.5
0.4
0.33
0.17
0.08
20
0
0 20 40 60 0
IT(AV) [A]
RthHA
0.6
0.8
1.0
2.0
4.0
8.0
0,4
0,3
ZthJC
0,2
[K/W]
0,1
50
100
150
Tamb [°C]
0,0
100
Rthi [K/W] ti [s]
0.041 0.008
0.043 0.0001
0.039 0.04
0.076 0.57
0.121 0.37
101
102
103
104
t [ms]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
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Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
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