isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FS14SM-16A
·FEATURES
·With TO-3PN packaging
·High speed switching
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
14
IDM
Drain Current-Single Pulsed
42
PD
Total Dissipation
275
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
℃
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
0.4
UNIT
℃/W
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