TIP130 Ver la hoja de datos (PDF) - Comset Semiconductors

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TIP130

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

NPN TIP130 – 131 – 132

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

VCEO

Collector-Emitter

Breakdown Voltage (*)

IC= 30 mA

IB= 0

VCB = VCEO

ICBO

Collector-Emitter sustaining IE= 0

Current

VCB = VCEO

IE= 0

TC=100°C

ICEO

Collector-Emitter Cutoff

Current

VCE = 30 V

VCE = 40 V

VCE = 50 V

IEBO

VCE(SAT)

VBE

hFE

COBO

Emitter Cutoff Current

Collector-Emitter saturation

Voltage (*)

Base-Emitter Voltage (*)

Forward Current transfer

ratio (*)

Output Capacitance

VEB= 5 V

IC= 0

IC= 4A

IB= 16 mA

IC= 6 A

IB= 30 mA

VCE= 4 V

IC= 4 A

VCE= 4 V

IC= 1 A

VCE= 4 V

IC= 4 A

VCB=10 V

IE=0

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

TIP130

TIP131

TIP132

TIP130

TIP131

TIP132

TIP130

TIP131

TIP132

TIP130

TIP131

TIP132

Min Typ Max Unit

60 -

-

80 -

-

V

100 -

-

-

- 0.2

-

- 0.2

-

-

-

-

0.2

1

mA

-

-

1

-

-

1

-

- 0.5

-

- 0.5 A

-

- 0.5

-

-

5 mA

-

-

2

V

-

-

3

-

- 2.5 V

500 -

-

1000

-

1500

0

-

-

- 200 pF

30/10/2012

COMSET SEMICONDUCTORS

2/3

09/11/2012

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