2N4236 Ver la hoja de datos (PDF) - TT Electronics.
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2N4236 Datasheet PDF : 3 Pages
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SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N4236
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
ICEX
ICBO
ICEO
IEBO
Collector-Emitter
Breakdown Voltage
Collector Emitter Cut-Off
Current
Collector Base Cut-Off
Current
Collector Emitte Cut-Off
Current
Emitter to Base Cut-off
Current
IC = 100mA
VCE = 60V
VCB = 80V
VCB = 60V
VBE = 7V
IC = 100mA
VBE = 1.5V
TA = 150°C
VCE = 1.0V
hFE(1)
Forward-current transfer
ratio
IC = 250mA
VCE = 1.0V
TA = -55°C
IC = 500mA
VCE = 1.0V
VCE(sat)(1)
Collector-Emitter Saturation
Voltage
IC = 1.0A
IC = 500mA
IB = 100mA
IB = 50mA
VBE(sat)(1)
Base-Emitter Saturation
Voltage
IC = 500mA
IC = 1.0A
IB = 50mA
IB = 100mA
DYNAMIC CHARACTERISTICS
| hFE |
Magnitude of small-signal
short-circuit forward-current
transfer ratio
Cobo
Open Circuit Output
Capacitance
IC = 100mA
f = 1.0MHz
VCB = 10V
f = 1.0MHz
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
VCE = 10V
IE = 0
Min. Typ Max. Units
80
V
100
nA
1.0
mA
100
nA
1.0
mA
0.5
40
30
150
-
15
20
0.6
0.4
V
1.1
1.5
3
-
100
pF
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 9243
Website: http://www.semelab-tt.com
Issue 1
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