X2N3922 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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X2N3922

Monolithic Dual N-Channel JFET Heneral Purpose Amplifier

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD. NEW JERSEY 07081

U.SA

tf nti.

Monolithic Dual N-Channel JFET

General Purpose Amplifier

TELEPHONE (973) 376-2922

(212)227-8005

FAX: (973) 378-8960

2N3921/2N3922

FEATURES

• Low Drain Current

• High Output Impedance

• Matched Va8,AVQS and gt.

PIN CONFIGURATION

6037

ABSOLUTE MAXIMUM RATINGS

(TA - 25°C unless otherwise noted)

Gate-Source or Gate-Drain Voltage (Note 1)

-60V

Gate CurrentfNote 1)

50mA

Storage Temperature Range

-65°Cto +20Q°C

Operating Temperature Range

-55°C to +200°C

Load Temperature (Soldering, 10sec)

+300*0

Total Power Dissipation

300mW

Derate above 25°C

1.7mW/°C

NOTE: Stresses above those listed under -Absolute Maximum

Ratings" may caute permanent damage to the device. These are

stress rating! only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications ii not implied. Exposure to absolute maximum

rating conoltions for extended periods may affect device reliability.

ORDERING INFORMATION

Part

Package

2N3921 Hermetic TO-71

2N3922 Hermetic TO-71

X2N3922 Sorted Chip Carriers

Temperature Range

-55°Cto+200°C

-55"Cto+2000C

-55°Cto+200°C

ELECTRICAL CHARACTERISTICS (TA - 2S°C unless otherwise specified)

SYMBOL

PARAMETER

MIN MAX

-1

loss

Gate Reverse Current

-1

BVnoo Drain-Gate Breakdown Voltage

50

VGS(O» Gate-Source Cutoff Voltage

-3

VQS

Gate-Source Voltage

-0.2

-2.7

IG

Gale Operating Current

-250

-25

loss

Saturation Drain Current (Note 1)

1

10

git

Common-Source Forward Transconductance (Note 2)

1500 7500

go.

Common-Source Output Conductance

35

c..

Common-Source Input Capacitance (Note 3)

18

Cn,

Common-Source Reverse Transfer Capacitance (Note 3)

6

»•

Common-Source Forward Transconductance

g«.

Common-Source Output Conductance

1500

20

NF

Spot Noise Figure (Note 3)

2

UNITS

nA

MA

V

PA

nA

mA

TEST CONDITIONS

Vos--30V, Vos-0

TA « 100°C

to-luA, ls-0

VDS-10V, to-1nA

VDS-10V. b-IOOuA

VoQ-IOV.b-TOOnA

TA - 100°C

Vos - 10V, VGS - 0

us

f=1kHz

Vos=10V. Vos-0

PF

f-IMHz

us

VDO-IOV,

lo-700uA

f-lkHz

dB

VosilOV, VQ8 = 0

f-tkHz,

Ro* 1megQ

NJ Seiiii-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information turrmhcil hy NJ Stmi-Conductors is believed to he holh accurate and reliable at the time of going to press. However NJ

Seini-C.'oniluctuis assumes no r^ponsihilily far any errors or omissions discovered in its use. NJ Semi-CiJiiductors encourages

customers to vcnK rh;it datasheets are current hetore placing orders.

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